+44 1478 350008International Journal of Advancements in Technology : Citations & Metrics Report
Articles published in International Journal of Advancements in Technology have been cited by esteemed scholars and scientists all around the world. International Journal of Advancements in Technology has got h-index 21, which means every article in International Journal of Advancements in Technology has got 21 average citations.
Following are the list of articles that have cited the articles published in International Journal of Advancements in Technology.
| 2024 | 2023 | 2022 | 2021 | 2020 | 2019 | 2018 | 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Total published articles |
53 | 57 | 64 | 37 | 43 | 11 | 22 | 23 | 25 | 10 | 15 | 15 | 33 | 51 | 25 |
Research, Review articles and Editorials |
3 | 12 | 15 | 10 | 4 | 8 | 18 | 20 | 20 | 10 | 15 | 15 | 31 | 50 | 25 |
Research communications, Review communications, Editorial communications, Case reports and Commentary |
30 | 44 | 49 | 10 | 4 | 3 | 5 | 3 | 5 | 0 | 0 | 0 | 2 | 1 | 0 |
Conference proceedings |
0 | 0 | 0 | 0 | 0 | 14 | 60 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 |
Citations received as per Google Scholar, other indexing platforms and portals |
70 | 108 | 188 | 202 | 209 | 225 | 215 | 164 | 169 | 175 | 113 | 80 | 63 | 26 | 0 |
| Journal total citations count | 1837 |
| Journal impact factor | 3.85 |
| Journal 5 years impact factor | 5.02 |
| Journal cite score | 6 |
| Journal h-index | 21 |
| Journal h-index since 2019 | 15 |
Important citations (1095)
Srivastava, pooja, and s. c. bose. "simulated analysis of double-gate mosfet and finfet structure using high-k materials." international conference on computing science, communication and security. springer, cham, 2021. |
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Asha, divya punia. "double gate nmos structure delineated using hfo2 dielcetric." |
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Ah, afifah maheran, et al. "robust optimization of planar high-k/metal gate nmos device with 22nm gate length." editorial board (2013): 104. |
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Petrosyants, k. o., d. a. popov, and d. v. bykov. "tcad simulation of dose radiation effects in sub-100-nm high-? mos transistor structures." russian microelectronics 47.7 (2018): 487-493. |
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Petrosyants, k. o., et al. "tcad leakage current analysis of a 45 nm mosfet structure with a high-k dielectric." russian microelectronics 45.7 (2016): 460-463. |
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Afifah maheran, a. h., et al. "optimisation of process parameters for lower leakage current in 22 nm n-type mosfet device using taguchi method." jurnal teknologi 68.4 (2014). |
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Petrosyants, konstantin o., and dmitriy a. popov. "high-k gate stacks influence on characteristics of nano-scale mosfet structures." 2nd international conference on modelling, identification and control. atlantis press, 2015. |
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Petrosyants, konstantin o., and dmitriy a. popov. "tcad simulation of total ionization dose response of 45nm high-k mosfets on bulk silicon and soi substrate." 2015 15th european conference on radiation and its effects on components and systems (radecs). ieee, 2015. |
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Sachdeva, nitin, munish vashishath, and p. k. bansal. "effect of gate work-function on gate induced drain leakage of mosfets." ijcem 21.1 (2018): 11-16. |
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Sachdeva, nitin, munish vashishath, and p. k. bansal. "effect of gate work-function on gate induced drain leakage of mosfets." ijcem 21.1 (2018): 11-16. |
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Shomali, zahra, jafar ghazanfarian, and abbas abbassi. "effect of film properties for non-linear dpl model in a nanoscale mosfet with high-k material: zro2/hfo2/la2o3." superlattices and microstructures 83 (2015): 699-718. |
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Maheran, ah afifah, et al. "scaling down of the 32 nm to 22 nm gate length nmos transistor." 2012 10th ieee international conference on semiconductor electronics (icse). ieee, 2012. |
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Maheran, ah afifah, et al. "effect of halo structure variations on the threshold voltage of a 22 nm gate length nmos transistor." materials science in semiconductor processing 17 (2014): 155-161. |
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Maheran, ah afifah, et al. "effect of halo structure variations on the threshold voltage of a 22 nm gate length nmos transistor." materials science in semiconductor processing 17 (2014): 155-161. |
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Meghanathan, natarajan. "impact of static nodes and pause time on the stability of connected dominating sets in a mobile ad hoc network." |
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Rudra, aritra, parag kumar guha thakurta, and rajarshi poddar. "a trade-off analysis of quality of service (qos) metrics towards routing in mobile networks: moga based approach." information systems design and intelligent applications. springer, new delhi, 2015. 135-144. |
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Tao, yanyun, et al. "a genetic algorithm-based multicast tree for routing in pub/sub system." proceedings of the 2nd international conference on communication and information processing. 2016. |
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Meghanathan, natarajan. "eigenvector centrality-based stable path routing protocol for cognitive radio ad hoc networks." international journal of network science 1.2 (2016): 117-133. |
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Temiz, murat, and bülent tavl?. "impact of limiting of hop count on lifetime of wireless sensor networks." 2013 21st signal processing and communications applications conference (siu). ieee, 2013. |
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Meghanathan, natarajan. "applications of graph theory algorithms in mobile ad hoc networks." mobile computing techniques in emerging markets: systems, applications and services. igi global, 2012. 98-125. |
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