International Journal of Advancements in Technology
Open Access

ISSN: 0976-4860

+44 1478 350008

International Journal of Advancements in Technology : Citations & Metrics Report

Articles published in International Journal of Advancements in Technology have been cited by esteemed scholars and scientists all around the world. International Journal of Advancements in Technology has got h-index 21, which means every article in International Journal of Advancements in Technology has got 21 average citations.

Following are the list of articles that have cited the articles published in International Journal of Advancements in Technology.

	2022	2021	2020	2019	2018
Year wise published articles	64	37	43	11	22
Year wise citations received	180	193	208	217	205

Journal total citations count	1837
Journal impact factor	3.85
Journal 5 years impact factor	5.02
Journal cite score	6
Journal h-index	21
Journal h-index since 2019	15

Important citations (1095)

Srivastava, pooja, and s. c. bose. "simulated analysis of double-gate mosfet and finfet structure using high-k materials." international conference on computing science, communication and security. springer, cham, 2021. View at Publisher View at Google Scholar View at Indexing
Asha, divya punia. "double gate nmos structure delineated using hfo2 dielcetric." View at Publisher View at Google Scholar View at Indexing
Ah, afifah maheran, et al. "robust optimization of planar high-k/metal gate nmos device with 22nm gate length." editorial board (2013): 104. View at Publisher View at Google Scholar View at Indexing
Petrosyants, k. o., d. a. popov, and d. v. bykov. "tcad simulation of dose radiation effects in sub-100-nm high-? mos transistor structures." russian microelectronics 47.7 (2018): 487-493. View at Publisher View at Google Scholar View at Indexing
Petrosyants, k. o., et al. "tcad leakage current analysis of a 45 nm mosfet structure with a high-k dielectric." russian microelectronics 45.7 (2016): 460-463. View at Publisher View at Google Scholar View at Indexing
Afifah maheran, a. h., et al. "optimisation of process parameters for lower leakage current in 22 nm n-type mosfet device using taguchi method." jurnal teknologi 68.4 (2014). View at Publisher View at Google Scholar View at Indexing
Petrosyants, konstantin o., and dmitriy a. popov. "high-k gate stacks influence on characteristics of nano-scale mosfet structures." 2nd international conference on modelling, identification and control. atlantis press, 2015. View at Publisher View at Google Scholar View at Indexing
Petrosyants, konstantin o., and dmitriy a. popov. "tcad simulation of total ionization dose response of 45nm high-k mosfets on bulk silicon and soi substrate." 2015 15th european conference on radiation and its effects on components and systems (radecs). ieee, 2015. View at Publisher View at Google Scholar View at Indexing
Sachdeva, nitin, munish vashishath, and p. k. bansal. "effect of gate work-function on gate induced drain leakage of mosfets." ijcem 21.1 (2018): 11-16. View at Publisher View at Google Scholar View at Indexing
Sachdeva, nitin, munish vashishath, and p. k. bansal. "effect of gate work-function on gate induced drain leakage of mosfets." ijcem 21.1 (2018): 11-16. View at Publisher View at Google Scholar View at Indexing
Shomali, zahra, jafar ghazanfarian, and abbas abbassi. "effect of film properties for non-linear dpl model in a nanoscale mosfet with high-k material: zro2/hfo2/la2o3." superlattices and microstructures 83 (2015): 699-718. View at Publisher View at Google Scholar View at Indexing
Maheran, ah afifah, et al. "scaling down of the 32 nm to 22 nm gate length nmos transistor." 2012 10th ieee international conference on semiconductor electronics (icse). ieee, 2012. View at Publisher View at Google Scholar View at Indexing
Maheran, ah afifah, et al. "effect of halo structure variations on the threshold voltage of a 22 nm gate length nmos transistor." materials science in semiconductor processing 17 (2014): 155-161. View at Publisher View at Google Scholar View at Indexing
Maheran, ah afifah, et al. "effect of halo structure variations on the threshold voltage of a 22 nm gate length nmos transistor." materials science in semiconductor processing 17 (2014): 155-161. View at Publisher View at Google Scholar View at Indexing
Meghanathan, natarajan. "impact of static nodes and pause time on the stability of connected dominating sets in a mobile ad hoc network." View at Publisher View at Google Scholar View at Indexing
Rudra, aritra, parag kumar guha thakurta, and rajarshi poddar. "a trade-off analysis of quality of service (qos) metrics towards routing in mobile networks: moga based approach." information systems design and intelligent applications. springer, new delhi, 2015. 135-144. View at Publisher View at Google Scholar View at Indexing
Tao, yanyun, et al. "a genetic algorithm-based multicast tree for routing in pub/sub system." proceedings of the 2nd international conference on communication and information processing. 2016. View at Publisher View at Google Scholar View at Indexing
Meghanathan, natarajan. "eigenvector centrality-based stable path routing protocol for cognitive radio ad hoc networks." international journal of network science 1.2 (2016): 117-133. View at Publisher View at Google Scholar View at Indexing
Temiz, murat, and bülent tavl?. "impact of limiting of hop count on lifetime of wireless sensor networks." 2013 21st signal processing and communications applications conference (siu). ieee, 2013. View at Publisher View at Google Scholar View at Indexing
Meghanathan, natarajan. "applications of graph theory algorithms in mobile ad hoc networks." mobile computing techniques in emerging markets: systems, applications and services. igi global, 2012. 98-125. View at Publisher View at Google Scholar View at Indexing
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