Journal of Physical Chemistry & Biophysics
Open Access
ISSN: 2161-0398
+44 1478 350008
ISSN: 2161-0398
+44 1478 350008
Jiaoqing Pan, Lijun Yuan, Li Tao, Hongyan Yu, Weixi Chen, Ying Ding and Guangzhao Ran
Accepted Abstracts: J Phys Chem Biophys
In this article, a buried ridge waveguide InGaAsP laser array bonded onto Si waveguide by selective area metal bonding (SAMB) is presented. The SAMB method is an improved metal bonding method which separates optical coupling area from bonding area laterally so as to effectively avoid light absorption of bonding metal. Compared with AlGaInAs lasers, the InGaAsP lasers are without Al oxidation and non radiative surface recombination issues. The fabrication process mainly includes making holographic gratings on the surface of III-V active region, etching active region to attain different widths, epitaxial growth of upper waveguide layer, Helium ion implantation and evaporating electrode metal on both sides of the active region, substrate thinning and evaporating electrode metal, etching Si waveguide and evaporating bonding metal on both sides of Si waveguide, bonding III-V material and Si waveguide. By varying the width of active region, different wavelengths can be easily obtained. The significant advantage of this method lies in simple fabrication process and low-cost to achieve multi-wavelength laser array with low threshold current, high output power, good thermal stability, and desirable optical spot. The typical hybrid laser has a threshold of 14mA with a cavity length of 300μm. The output power is 5mW when the current is 100mA. The maximum operating temperature can be much higher than 50°C. A near-field image proves most of the optical field distributed in the Si waveguide. The simplicity and flexibility of the fabrication process and high yield make this approach a practical way to achieve Si based laser.
Jiaoqing Pan received his Ph.D. degree in Materials Engineering from Shandong University, Jinan, China (2003). From 2003 to 2005 he was with Institute of Semiconductors, Chinese Academy of Sciences (CAS) as a Postdoctoral Researcher, where he was mainly engaged on the research on MOVPE growth of high strained quantum well diode lasers. He became an Associate Professor in 2005 and a Professor in 2010, and his currents activities cover tunable diode lasers and integrated optical devices. He has authored/co-authored more than 70 papers. His current research interests include laser gas spectroscopy applications, high-mobility CMOS devices and hybrid InGaAsP-Si lasers.