Journal of Physical Chemistry & Biophysics
Open Access
ISSN: 2161-0398
+44 1478 350008
ISSN: 2161-0398
+44 1478 350008
Alaa J Ghazai
Posters-Accepted Abstracts: J Phys Chem Biophys
In this work, the novel structure of AlInGaN/GaN superlattice (SlS) cladding layer for Al0.08In0.08Ga0.84N/ Al0.1In0.01Ga0.89N UV laser diodes (LDs) was proposed using Integrated System Engineering Technical Computer Aided Design (ISE TCAD) software. The optical confinement factor increased highly when the new structure was considered as a confinement layer. This attributed to the increasing of the radiative recombination and reducing the optical losses within active region which was provided by the insert quaternary AlInGaN epilayer of GaN in superlattice system. The new structure has good improvement of the UV LDs performance under study compared with the conventional AlGaN/GaN superlattice cladding layers. One of the reasons of that is related to the free cracking releases by inserting quaternary epilayer in which the zero strained or high matched occurred.